FQB22P10TM_F085 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

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* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switchin.

Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features
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Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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